Multi-functional shutter disk for thin film deposition chamber

ABSTRACT

The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

BACKGROUND

In manufacturing semiconductors, a process chamber or process chambersystem is used to maximize the throughput rate as measured in wafers perhour (WPH). The wafers go through various steps within each chamber ofthe process chamber system to process the wafers to manufacturesemiconductors, integrated circuits, microprocessors, memory chips orthe like. These chambers include degas chambers, pre-clean chambers,cooling chambers, chemical vapor deposition (CVD) chambers, and physicalvapor deposition (PVD) chambers. A transfer system capable oftransferring wafers between chambers assists in reducing the bottleneckof the manufacturing process by efficiently transferring the wafersbetween each chamber performing different functions.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a plan view of one embodiment of a process chamber systemincluding a multifunctional chamber having a multifunctional shutterdisk in accordance with embodiments of the present disclosure.

FIG. 2 is a cross-sectional view of a multifunctional chamber structureincluding a multifunctional shutter disk according to one embodiment ofthe present disclosure.

FIG. 3 is a bottom view of a multifunctional shutter disk according toone embodiment of the present disclosure.

FIG. 4 is a flow chart of a film deposition process according toembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The various aspects of the present disclosure will be now detailed inconnection with the figures.

FIG. 1 is a plan view of one embodiment of a multifunctional chamberhaving a multifunctional shutter disk in accordance with embodiments ofthe present disclosure.

In the embodiment of FIG. 1, a chamber process system 100 includes oneor more pentagonal main frames 110, 120 having a plurality of sidewalls130. A plurality of vacuum load lock chambers 140 is located in thecenter of pentagonal main frames 110, 120. A plurality of chambers, 152,153, 154, 155, 156, 157 and 158 are positioned adjacent to each sidewall130 of the vacuum load lock chambers 140.

An external workpiece elevator 160 is located adjacent to the chamberprocess system 100. The external workpiece elevator 160 is configured tohold a plurality of workpieces (e.g., wafers, substrates, or the like)and supply the workpieces into the chamber process system 100 forprocessing. The external workpiece elevator 160 may include a cassettefor containing a plurality of workpieces and an automatic distributorfor selecting the workpieces from the cassette and timely supplying theselected workpieces to the vacuum load lock chambers 140 and into theplurality of chambers 152, 153, 154, 155, 156, 157 and 158.

In one or more embodiments, the vacuum load lock chamber 140 ismaintained in a vacuum state. The vacuum load lock chamber 140 deliversa workpiece to one of the plurality of chambers 152, 153, 154, 155, 156,157 or 158 and loads the workpiece into a selected chamber. After theloading process, the vacuum load lock chamber 140 spatially separates orlocks the vacuum load lock chamber 140 from at least one of theplurality of chambers 152, 153, 154, 155, 156, 157, 158 duringprocessing. The vacuum load lock chamber 140 includes a wafer transfersystem 170 for transferring the workpiece from the external workpieceelevator 160 to the plurality of chambers 152, 153, 154, 155, 156, 157and 158. The wafer transfer system 170 also transfers the workpiecebetween the chambers 152, 153, 154, 155, 156, 157 and 158 depending onthe next step of the overall manufacturing process. The wafer transfersystem 170 may include a plurality of robotic arms 172 for moving theworkpiece.

In a related chamber processing system, the pre-clean process, the degasprocess, the cooling process, the deposition process are each performedin separate, dedicated chambers. That is, in a related system, there area separate degas chamber, pre-clean chamber, chemical vapor deposition(CVD) chamber, physical vapor deposition (PVD) chamber and coolingchamber, in which, each chamber is used for one specific and distinctprocess. Typically in the related chamber processing system, an externalworkpiece elevator retrieves the workpiece and provides it to adedicated chamber for the degassing process, and after the degassingprocess, the system provides the workpiece to another chamber for thepre-cleaning process, and thereafter provides the workpiece to anotherchamber for the PVD or CVD process. The transfer time involved in movingthe workpiece from the degas chamber to the pre-clean chamber and to thefilm deposition chamber contributes significantly to the overallprocessing time for degassing, pre-cleaning, and depositing a film onthe workpiece in the related system.

In accordance with one or more embodiments of the present disclosure,one or more of the plurality of chambers 152, 153, 154, 155, 156, 157,158 is a multifunctional chamber capable of performing at least a degasprocess, a pre-clean process, and a deposition process. In accordancewith the present disclosure, such a multifunctional chamber includes amultifunctional shutter disk capable of performing the degas process andthe pre-clean process unlike related shutter disks in the art which areunable to perform a degas process or a pre-clean process. Using ashutter disk capable of performing a degas process and a pre-cleanprocess allows one or more chambers of the plurality of chambers 152,153, 154, 155, 156, 157, 158 to function as a multifunctional chamberwhen equipped with a multifunction shutter disk in accordance withembodiments of the present disclosure. The benefit of a multifunctionalchamber is that it avoids the need to transfer a workpiece to differentchambers to carry out processes that are carried out in themultifunctional chamber. Avoiding such transfers substantially reducesthe transfer time from one chamber to another chamber, which reduces theoverall time for completion of the film deposition process. In addition,use of a multifunctional chamber reduces or eliminates the need for aseparate, dedicated degas chamber and pre-clean chamber. These unneededdegas and pre-clean chambers can be replaced with multifunctionalchambers which thereby increases the overall throughput rate of thechamber process system 100. The details of the multifunctional shutterdisk are described in connection with the following figures.

FIG. 2 is a cross-sectional view of a multifunctional chamber structure200 according to one embodiment of the present disclosure. The chamber200 includes a workpiece support 210 (or a holder 210) upon which aworkpiece 215 is placed during processing. The workpiece support 210 is,for example, fabricated from aluminum, stainless steel, ceramic orcombinations thereof. A shutter disk 220 is positioned above theworkpiece 215. Generally, a shutter disk 220 is used during cleaning ofa target 230 to protect the workpiece support 210 and other componentsadjacent and around the workpiece support 210. For example, the shutterdisk 220 is positioned between the target 230 and the workpiece support210 to isolate the target 230 and other components to be cleaned duringthe cleaning process from other components within the chamber 200 whichcould be damaged by cleaning of the target 230 and pasting materials. Inone embodiment, the shutter disk 220 is housed in an enclosure (notshown) attached to the side of the chamber 200 based on the type ofoperations being performed. The shutter disk 220 is connected to arotating arm for moving the shutter disk 220 in a horizontal directionor a vertical direction based on the stage and type of the operation(e.g., pre-cleaning, degassing, or other suitable steps involved inmanufacturing). For example, based on the operation, the rotating armmay place the shutter disk 220 to overlie the workpiece 215 (or overliethe workpiece support 210) or may otherwise place the shutter disk 220inside the enclosure.

In one embodiment, an RF power circuit 235 is connected to the workpiecesupport 210 to provide an RF bias voltage to the workpiece 215 duringprocessing. In another embodiment, the RF power circuit 235 is connectedto the shutter disk 220 and provides RF power to the shutter disk 220during processing.

In one embodiment, a DC power circuit 240 is connected to the shutterdisk 220 and provides DC power to the shutter disk 220. In anotherembodiment, the DC power circuit 240 provides a DC bias to the workpiece215. In further embodiments, the DC power circuit 240 is connected tothe target 230 and provides the target 230 with a DC bias voltage. Forexample, in some embodiments in accordance with the present disclosure,the target 230 and the workpiece support 210 are biased relative to eachother by a power source (DC or RF). In other embodiments, an electrode232 coupled to the target 230 and the DC power circuit 240 may beprovided. The electrode 232 may be biased with a DC bias during thedeposition process.

In one embodiment of the present disclosure, a gas supply 250 isconnected to the shutter disk 220 and supplies a gas to the shutter disk220. The supplied gas is useful during a degas process, a pre-cleanprocess, or a deposition process. In another embodiment, the gas supply250 controls the gas flow into the chamber 200. For example, the gassupply 250 may provide the argon (Ar) gas into the chamber 200. Infurther embodiments, various gases may be supplied to the chamber 200through the gas supply 250 during etch cleaning, such as hydrogen,oxygen, fluorine-containing gases or inert gases such as argon,depending on the materials to be removed.

A vacuum pump 260 is connected to the chamber 200. The vacuum pump 260is capable of creating a vacuum state in the chamber 200 duringprocessing of the workpiece 215. A shielding 270 surrounds the workpiece215 during processing and a cover ring 280 maintains the workpiece 215against the workpiece support 210 during processing.

The target 230 provides material to be deposited on the workpiece 215during, for example, a PVD process. A magnet 290 enhances uniformconsumption of the target material during processing. A plasma is formedbetween the target 230 and the workpiece 215 from the gas supplied, suchas Ar. Ions within the plasma are accelerated toward the target 230 andbombard the target 230 to remove portions of the target material bydislodging portions of the material from the target 230. The dislodgedtarget material is attracted towards the workpiece 215 due to thevoltage bias and deposits a film of target material on the workpiece 215(which is generally negatively biased).

A deposition ring 285 surrounds the workpiece support 210. A cover ring280 positioned adjacent to the deposition ring 285 partially overlapsthe deposition ring 285. The cover ring 280 is supported by thedeposition ring 285. The cover ring 280 and the deposition ring 285protect the regions of the workpiece support 210 that are not covered bythe workpiece 215 during processing (e.g., sputtering process or PVDprocess). The rest of the chamber 200 is protected by the shielding 270that is adjacent to the cover ring 280. The cover ring 280 and thedeposition ring 285 reduce or minimize materials from the target 230depositing on the workpiece support 210. During a PVD process, the Argas in the chamber 200 is turned into a plasma state. That is, theplasma will have positive Ar ions and electrons. The positive Ar ionswill be attracted towards the negative plate where the target 230 islocated (e.g., the target 230 may be negatively biased using the DCpower circuit 240). This attraction force causes the positive Ar ions tomove towards the negative plate where the target 230 is located. Theseions impact the target 230 with force during the process. This forcecauses some atoms from the target surface to be dislodged from thetarget 230 and eventually deposit onto the workpiece 215. If some of thedislodged materials from the target 230 comes in contact with theworkpiece support 210 and its surroundings (e.g., walls of the workpiecesupport 210 and the periphery of the workpiece 215), dislodged materialscan deposit onto the workpiece support 210, its surroundings or theperiphery of the workpiece 215. The cover ring 280 and the depositionring 285 cooperate to reduce or eliminate materials from the target 230from coming in contact with components of the chamber 200 upon whichdeposition of the target material is undesired.

The deposition ring 285 can be removed to clean these target materialdeposits from the surfaces of the deposition ring 285. By employing thedeposition ring 285, the workpiece support 210 does not have to bedismantled to be cleaned after every PVD process. In addition, thedeposition ring 285 protects the edge or periphery surfaces of theworkpiece support 210 to reduce their erosion by the energized plasma.In one embodiment, the deposition ring 285 can be formed with a ceramicmaterial, such as aluminum oxide. However, other materials may be usedsuch as synthetic rubbers, thermoset, plastic, thermoplastics or anyother material that meets the chemical compatibility, durability,sealing requirements, application temperature, etc. For example, theceramic material may be molded and sintered using known technologiessuch as isostatic pressing, followed by machining of the molded sinteredpreform using suitable machining methods to achieve the shape anddimensions required. However, other known techniques for manufacturingmay be used.

In one embodiment, the cover ring 280 is fabricated from a material thatcan resist erosion by the generated plasma, for example, a metallicmaterial such as stainless steel, titanium or aluminum, or a ceramicmaterial, such as aluminum oxide. However, other suitable materials maybe used such as synthetic rubbers, thermoset, plastic, thermoplastics orany other material that meets the chemical compatibility, durability,sealing requirements, application temperature, etc.

In accordance with embodiments of the present disclosure, a heater 295is provided on the workpiece support 210. During operation, theworkpiece 215 is placed on top of the heater 295 that is arranged on atop surface of the workpiece support 210. In one embodiment, the heater295 may be incorporated as a single, integrated structure as theworkpiece support 210. In other embodiments, the heater 295 may be aseparate component that is overlain on top surface of the workpiecesupport 210. The heater 295 is designed to heat the workpiece 215 toprepare the workpiece 215 for processing.

While not shown in the figures, a controller circuit is connected to thechamber 200 to perform and execute the various steps of themanufacturing process. Typically, a controller circuit includesmicroprocessor, central processing unit, and any other integratedcircuit capable of performing instructions. In one embodiment, thecontroller circuit may control various chambers, robotic arms 172 of thewafer transfer system 170, and various sub-processors incorporatedwithin the chamber process system 100. Further components such as memorymay be coupled to the controller circuit. The memory orcomputer-readable medium may be one or more of readily available memorysuch as random access memory (RAM), read only memory (ROM), hard disk,or any other form of digital storage, local or remote.

FIG. 3 is a bottom view 300 of a multifunction shutter disk 220according to embodiments of the present disclosure.

As shown in FIG. 3, in one embodiment, the shutter disk 220 has acircular shape and a first side (e.g., a bottom surface illustrated inFIG. 3) of the disk 220. A second side of the shutter disk 220 oppositeof the first side may be connected to other parts of the chamber 200.The multifunction shutter disk 220 according to the present disclosureincludes at least a thermal energy source module 310 (such as a lampmodule 310), a power module 320, and a gas line module 330 on the firstside. For example, the shutter disk 220 has a first radius R1. In theembodiment illustrated in FIG. 3, the lamp module 310 is arranged in anarea of the bottom surface of disk 220 having a second radius R2. Thelamp module 310 is located within an inner circular area defined by thesecond radius R2. The power module 320 (also referred to as an etchmodule 320) is arranged adjacent to the lamp module 310. For example, asillustrated in FIG. 3, the power module 320 is arranged in the areaoutside of the second radius R2 and within the third radius R3. That is,the power module 320 is located within a first outer ring area definedby the area between the third radius R3 and the second radius R2. Inaccordance with embodiments of the present disclosure, the gas linemodule 330 is arranged adjacent to the power module 320. The gas linemodule 330 is arranged in the area outside of the third radius R3 andwithin the first radius R1. That is, the gas line module 330 may belocated within a second outer ring area defined by the area between thethird radius R3 and the first radius R1.

In other embodiments, the arrangements of the lamp module 310, the powermodule 320, and the gas line module 330 can be changed. For example, thepower module 320 may be located in the inner circular area, and the gasline module 330 may be located in the first outer ring area, and thelamp module 310 may be located in the second outer ring area. Othervarious arrangements of the lamp module 310, power module 320 and gasline module 330 may be employed and the arrangements are not necessarilyfixated to the embodiments shown in the drawing. In addition, although ashutter disk in accordance with embodiments of the present disclosurehas been described as including a lamp module 310, power module 320 andgas line module 330, embodiments of a shutter disk in accordance withthe present disclosure may omit one or more of the lamp module 310,power module 320 and gas line module 330.

In one embodiment, the lamp module 310, the power module 320, and thegas line module 330 may be formed integral with the shutter disk 220 andbe arranged at the first side in a co-planar manner. In anotherembodiment, the modules may be removably attached to the first side ofthe shutter disk 220 and may be attached in a non co-planar manner.

In other embodiments, the lamp module 310, the power module 320, and thegas line module 330 can be arranged at any location at the first side ofthe shutter disk 220. That is, the modules do not have to be formed in aconcentric arrangement as shown in FIG. 3. For example, each of themodules does not have to be disposed in an inner circular area, or afirst and second outer ring area, and have circle shapes or ring shapes.In other embodiments, the modules may have different shapes, sizes, anddimensions. For example, the modules may have a polygonal shape (e.g.,rectangular shape, triangle shape, or the like) or a shape of a line(e.g., straight line, circular line, or the like) or any other shapesuitable for implementation of providing thermal energy, power or gassuitable to carry out the degas function and the pre-clean function. Forexample, the lamp module 310 may include a single lamp positioned on thefirst side of the shutter disk 220 or alternatively, a ringconfiguration that includes several lamps that are spaced along theperimeter of the first side.

In some embodiments, the lamp module 310 and the power module 320 may beimplemented as a single module. For example, a single module can beformed to perform both functions of a lamp module and a power module. Inthese embodiments, the first side of the shutter disk 220 may have acombined, single module with a lamp function and a power function, and aseparate gas line module 330. In further embodiments, the modules can becombined to one module depending on the overlapping functions of themodules.

The lamp module 310 is configured to heat the workpiece 215 to atemperature that results in the removal of external moisture during thedegas operation (e.g., outgassing). For providing heat, the lamp module310 may include any suitable heating device suitable to raise thetemperature of the workpiece sufficiently to remove external moisturefrom the surface of the workpiece 215. For example, the lamp module 310may include an infrared heater, a laser heater, a radiant or convectiveheater or other wafer heaters to raise the temperature of the workpiece215. Further examples of the lamp module 310 may include a heaterincluding a heating coil on a surface of the heater facing the workpiece215. Additionally or alternatively, the heater may include a heatinglamp on the surface of the heater facing the workpiece 215. Bycontrolled heating of the workpiece 215 using the lamp module 310,certain gas and moisture present in the workpiece 215 can be removedduring the degas process. In accordance with some embodiments, the lampmodule 310 includes a cover coating to protect the outer surface of thelamp module 310 and/or the shutter disk 220. The cover coating on thelamp module 310 protects the module when it is directly exposed toplasma during the degas process. Direct exposure to plasma during thedegas process may degrade the quality and function of the shutter disk220. The cover coating may also reduce the frequency of having to cleanor replace the shutter disk 220. Examples of materials for covercoatings include but not limited to quartz and other suitable materialsfor performing the protection function.

The power module 320 is configured to remove oxides, impurities, andforeign external materials during a pre-clean operation. For example,the power module 320 removes impurities from the surface of theworkpiece 215 through chemical etching method or physical etching methodbefore further processing is performed on the workpiece 215.

In one embodiment, the power module 320 can be implemented using an RFpower source. However, in other embodiments, other power source may beused and the power source is not necessarily limited to an RF powersource. For example, a DC power source may be used in the power module320. To initiate the pre-cleaning process, parameters of the powermodule 320 may be set that is suitable for cleaning the impurities onthe workpiece 215. In some embodiments, additional gas may be suppliedthrough the gas line module 330 in conjunction with applying powersource to the workpiece 215. In one example, a fluorine-containingcompound gas may be supplied and about 300 to about 2200 [watts: W] ofRF power source may be applied. The power source from the power module320 will form plasma that reacts and cleans the impurities on theworkpiece 215. The power level of the power module 320 may be changedduring the process to set different power levels after the cleaningprocess is completed to minimize the reaction with the walls or otherstructures within the chamber.

In some embodiments, the power module 320 may incorporate RF generatorsconfigured to generating RF power with various frequencies. For example,the power module 320 may include a low frequency RF generator and a highfrequency RF generator to supply various ranges of power levels andfrequencies. In one embodiment, the power module 320 includes RF powergenerator that is embedded in the shutter disk 220. The RF powergenerator can provide plasma to clean the workpiece 215.

In one embodiment of the present disclosure, a metal hard mask (MHM)process using TiN is implemented using the multifunctional chamber 200having the multifunctional shutter disk 220 in accordance with thepresent embodiment. In the related art, a workpiece is retrieved from aworkpiece elevator by a wafer transfer system and put into a degaschamber for removing external moisture from the surface of theworkpiece. After being processed in the degas chamber, the wafertransfer system transfers the workpiece from the degas chamber and to aPVD chamber for a deposition process. The transfer time for moving theworkpiece from the workpiece elevator to the degas chamber and then tothe PVD chamber contributes to the overall processing time for theworkpiece which reduces the throughput of the chamber process system.For example, in the related art, the throughput for performing an MHMprocess is about 50 pieces per hour. In contrast, an MHM process carriedout using embodiments of the present disclosure has a throughput forperforming an MHM process of about 60 pieces per hour. The greaterthroughput when performing an MHM process using embodiments of thepresent disclosure is due to a reduced time spent transferring theworkpiece from the workpiece elevator to a separate degas chamber andthen to a separate PVD chamber. That is, in accordance with embodimentsof the present disclosure, the workpiece 215 is picked up from theworkpiece elevator 160 by the wafer transfer system 170 and is placed inthe PVD chamber. In the PVD chamber, first a degas operation isperformed by utilizing the shutter disk including a lamp module 310 toremove external moisture such as water from the surface of the workpiece215. After the degas operation, the shutter disk 220 is stored in theenclosure (e.g., the disk will be stored in the enclosure when not inuse), and deposition process can be performed in the chamber without thewafer transfer system 170 having to move the workpiece 215 to a separatechamber. That is, within the same chamber, gas (e.g., Ar) will besupplied in the chamber and a plasma state will be formed by applyingsuitable voltages for creating the plasma state (e.g., an electricallycharged gas including electrons and ions that have positive electricalcharge). These plasma state particles bombard the target 230 and thematerials separated from the target 230 due to the impact is depositedon the workpiece 215. Accordingly, since the transfer time for movingthe workpiece 215 from the workpiece elevator 160 to subsequent chambersare eliminated, the throughput of the chamber process system 100 can beincreased about 20% compared to the related chamber system in the art.Moreover, the throughput can be further improved in processes thatrequire further processing such as pre-clean process as workpiecesprocessed using the multi-functional chambers and multi-functionalshutter disks of the present disclosure do not require transfer to aseparate pre-clean chamber, unlike the processing of workpieces in therelated chamber system that utilize a pre-clean chamber separate from adegas chamber or a deposition chamber.

In another embodiment, a nickel (Ni) process can be implemented usingthe multifunctional chamber 200 having the multifunctional shutter disk220 in accordance with embodiments of the present disclosure. In therelated art, a workpiece is picked up from the workpiece elevator by thewafer transfer system and delivered to a pre-clean chamber for removingoxides or impurities by a chemical method from the surface of theworkpiece. After being processed in the pre-clean chamber, the wafertransfer system picks up the workpiece from the pre-clean chamber anddelivers it to a PVD chamber for the deposition process. The transfertime for moving the workpiece from the workpiece elevator to thepre-clean chamber and to the PVD chamber reduces the throughput of thechamber process system. For example, in the related art, the throughputfor performing a Ni process is about 15 pieces per hour. In contrast, aNi process carried out according to embodiments of the presentdisclosure utilizing a multifunctional chamber and multifunctionalshutter disk exhibits throughput about 25 pieces per hour due to thereduced transfer time involved. That is, utilizing embodiments of thepresent disclosure, the workpiece 215 is picked up from the workpieceelevator 160 by the wafer transfer system 170 and is placed in the PVDchamber. In the PVD chamber, a chemical pre-clean operation is performedfirst by utilizing the power module 320 of the shutter disk 220 tochemically clean the surface of the workpiece 215. The gas line module330 is also used to provide reactive gas such as nitrogen trifluoride(NF₃) for the cleaning process. The NF₃ gas (or any other suitable gassuch as tungsten silicide) is provided through the gas line module 330and the power module 320 uses NF₃ gas in the plasma etching (or plasmacleaning) of the workpiece 215 (e.g., silicon wafers). For example, thepower module 320 initially breaks down in situ the NF₃ gas by use ofplasma. The resulting fluorine atoms are the active cleaning agents thatattack, for example, the polysilicon, silicon nitride and silicon oxidepresent in the workpiece 215. After the pre-clean operation, the shutterdisk 220 is stored in the enclosure and deposition process can beperformed in the chamber without the wafer transfer system 170 having tomove the workpiece 215 to a separate chamber. That is, within the samechamber, the deposition process will be performed on the workpiece 215.Accordingly, since the transfer time for moving the workpiece 215 fromthe workpiece elevator 160 to subsequent chambers are reduced oreliminated, the throughput of the chamber process system 100 can beincreased about 66.6% compared to the related chamber system describedabove.

In yet another embodiment in accordance with the present disclosure, aTiN process is implemented using the multifunctional chamber 200 havingthe multifunctional shutter disk 220. In the related art, a workpiece ispicked up from the workpiece elevator by the wafer transfer system andis initially put into a degas chamber transferred to a pre-clean chamberthen transferred to a PVD chamber and finally transferred to a CVDchamber for TiN processing. That is, in the related chamber system, theworkpiece is moved between at least 4 separate chambers (e.g., degaschamber, pre-clean chamber, PVD chamber, and CVD chamber). The transfertime for moving the workpiece from the workpiece elevator to thesemultiple chambers reduces the throughput of the chamber process system.For example, in the related art, the throughput for performing a TiNprocess is about 35 pieces per hour. In contrast, a TiN processaccording to the present disclosure exhibits a throughput of about 46pieces per hour due to the reduced transfer time. That is, in accordancewith the present disclosure, the workpiece 215 is picked up from theworkpiece elevator 160 by the wafer transfer system 170, is placed inthe PVD chamber and is then moved to the CVD chamber. In the PVDchamber, first a degas operation is performed by utilizing the lampmodule 310 of the shutter disk 220 to remove external moisture from thesurface of the workpiece 215. Then, secondly, in the same chamber, aphysical pre-clean operation is performed by utilizing the power module320 of the shutter disk 220 to physically clean the surface of theworkpiece 215. In the physical pre-clean process, an inert gas such asAr is used. In some embodiments, the gas line module 330 provides theinert gas for the cleaning process. In other embodiments, the Ar gas maybe supplied to the chamber 200 through a gas inlet connected to thechamber 200. A plasma cleaning or plasma etching is used during theprocess of the physical pre-clean operation. A plasma etching is a formof plasma processing used to clean oxide or other impurities in thesurface of the workpiece 215. The plasma source, known as etch species,can be either charged (ions) or neutral (atoms and radicals). The etchspecies reacts with the materials in the workpiece 215 and etches orcleans the surface of the workpiece 215. Due to its etching properties,plasma etching can also be used to fabricate integrated circuits. Afterthe pre-clean operation, the shutter disk 220 is stored in the enclosureand a PVD deposition process can be performed in the chamber without thewafer transfer system 170 having to move the workpiece 215 to a separatechamber. After the PVD process, then the workpiece 215 is finallytransferred to the CVD chamber for CVD processing. Accordingly, sincethe transfer time for moving the workpiece 215 from the workpieceelevator 160 to subsequent chambers are significantly reduced, thethroughput of the chamber process system 100 can be increased about31.4% compared to the related chamber system in the art.

FIG. 4 is a flow chart 400 of a process for depositing two films in achamber system 100 according to embodiments of the present disclosure.At step S410, a plurality of workpieces is stored in a cassette in anexternal workpiece elevator located adjacent to the chamber processsystem. At step S420, a workpiece among the plurality of workpieces isselected and delivered to a first chamber having a multifunctionalshutter disk for depositing a first film on the workpiece. After thefirst film is deposited on the workpiece, the steps may continue to stepS430, and step S440 depending on how many films will be deposited on theworkpiece. The first chamber having a multifunctional shutter diskincludes at least a lamp module and a power module to perform thefunction of the degas operation and the pre-clean operation. The degasoperation is performed using the lamp module incorporated in the shutterdisk. The pre-clean operation is performed using the power moduleincorporated in the shutter disk. By including a multifunction shutterdisk in each of the chambers, e.g., first chamber for performing adeposition of a first film at step S420, second chamber for performing adeposition of a second film at step S430, nth chamber for performing adeposition of an nth film at step S440, the transfer time involved inmoving to a degas chamber for the degas operation and a pre- cleanchamber for the pre-clean operation is eliminated. After the filmdeposition process is performed on the workpiece, the workpiece is movedusing a wafer transfer system to a cooling chamber at step S450. Afterthe cooling process, the wafer transfer system moves the workpiece tothe external workpiece elevator for further processing.

To illustrate the advantages of a multifunctional chamber having amultifunctional shutter disk formed in accordance with embodiments ofthe present disclosure, a time estimate of how long each process takesin an example process will be illustrated. It should be understood thatthe times given below are representative of one related process. Otherrelated processes may have different process times which are less thanor greater than the process times described below. In a processutilizing a related system, the transfer time between the externalworkpiece elevator and a chamber or from one chamber to another chamberis about 30 to 40 seconds. The degassing operation involves about 120 to130 seconds, and the pre-cleaning operation involves about 150 to 160seconds. The film deposition of the first film involves about 100 to 110seconds, and a deposition of a second film involves about 200 to 210seconds. Further, the time involved in the cooling process is about 60to 70 seconds.

In a related chamber system, transferring a workpiece from the externalworkpiece elevator to a degas chamber takes about 30 to 40 seconds. Asdescribed above, the degas operation takes about 120 to 130 seconds. Thetransfer time from the degas chamber to the pre-clean chamber is about30 to 40 seconds and the pre-clean operation takes about 150 to 160seconds. After the pre-cleaning process, the transfer of the workpieceto a first film deposition chamber takes about 30 to 40 seconds. Thedeposition process takes about 100 to 110 seconds. After the first filmdeposition process in the first chamber, the workpiece is transferred toa second chamber for depositing a second film. This transfer time isabout 30 seconds and the deposition of the second film takes about 200to 210 seconds. Thereafter, another 30 to 40 seconds is required to movethe workpiece from the second chamber to the cooling chamber and thecooling process takes about 60 to 70 seconds. After the cooling processis complete, the workpiece is transferred to the workpiece elevatorwhich takes another 30 to 40 seconds. In sum, the total time involved inprocessing a single workpiece according to this described relatedprocess amounts to at least about 810 seconds.

As a contrast to the process described in the previous paragraph using arelated chamber system, a similar process using a multifunctionalchamber and shutter disk in accordance with the present disclosure isdescribed. A similar process using a multifunctional chamber and shutterdisk of the present disclosure moves a workpiece from the workpieceelevator at step S410 to the first chamber. This transfer takes about 30to 40 seconds. The process at step S420 which involves degassing,pre-cleaning, and depositing a first film on the workpiece, involves atotal of about 370 to 380 seconds. That is, as explained previously, thedegassing operation involves about 120 to 130 seconds, the pre-cleaningoperation involves about 150 to 160 seconds, and the deposition of thefirst film involves about 100 to 110 seconds. However, in accordancewith processes of the present disclosure there is no transfer timeinvolved in moving the workpiece from a degas chamber to a pre-cleanchamber and to a first film deposition chamber. After the deposition ofthe first film, the workpiece is moved from the first chamber to asecond chamber at step S430. Here, the deposition of the second film isperformed and involves about 200 seconds. Thereafter, at step S450 (inthis example, there were only two deposition of films involved) forcooling. That is, about 30 to 40 seconds is used to move the workpiecefrom the second chamber to the cooling chamber and the cooling processtakes about 60 to 70 seconds. After the cooling process is complete, atstep S460, the workpiece is transferred to the workpiece elevator whichwill take another 30 to 40 seconds. In sum, the total time involved inprocessing a single workpiece in accordance with the schedule describedabove amounts to at least about 750 seconds. In contrast, the processcarried out by the related chamber system described above involves atleast about 60 more seconds due to the increased time spent transferringthe workpiece from chamber to chamber. This reduction in transferringtime contributes to the increase in the throughput rate for the chamberprocess systems in accordance with embodiments described herein.

A multifunctional shutter disk according to the present disclosureprotects the holder (or the workpiece support) just as the relatedshutter disk and further provides an ability to carry out a degassingprocess and the pre-cleaning process in the same chamber. Byincorporating a multifunctional shutter disk in a film depositionchamber, the chamber process system does not have to move the workpiecesfrom one chamber to another chamber in order to carry out a degassingprocess, pre-cleaning process and deposition process, but rather cancarry out all three processes in a single chamber. Practicingembodiments of the present disclosure will also simplify the types ofchambers (e.g., degas chamber, pre-clean chamber, CVD/PVD chamber,cooling chamber, or the like) required during the film depositionprocess.

One aspect of the multifunctional shutter disk is that it includes alamp device, a DC/RF power device, and a gas line on one surface of theshutter disk. With this configuration, simplifying the chamber type ispossible as the various specific, dedicated chambers such as theaforementioned chambers are not required. For example, by using themultifunctional shutter disk, the degassing function and thepre-cleaning function is provided within a single chamber. To bespecific, the CVD chambers or the PVD chambers can simply incorporatethe multifunctional shutter disk within the chamber and the degasprocess and the pre-clean process can be performed within the CVD or PVDchambers. This means that a separate degas chamber and a pre-cleanchamber is no longer required. Not needed separate degas and pre-cleanchambers has the added benefit of they can be replaced with CVD or PVDchambers, which can contribute positively to the throughput of chambersystems in accordance with the present disclosure.

The present disclosure has several benefits which are not limited to theenumerated benefits. First of all, by combining the degas/pre-cleanchamber function in a shutter disk, the throughput can improvesignificantly. Secondly, because the need for the costly degas chambersand the pre-clean chambers are obviated, the overall manufacturing costsis decreased. Finally, the wafers do not have to be transferred from adegas chamber to a pre-clean chamber, and then to a CVD or PVD chamber.By reducing or eliminating the time involved in transferring wafers toand from chambers, the overall time involved in the film deposition issignificantly reduced.

One aspect of the present disclosure provides a film deposition chamber.The film deposition chamber includes an electrode; a holder configuredto hold a workpiece; and a shutter disk overlying the holder.

The shutter disk includes: a first side and a second side, the firstside of the shutter disk facing the holder; and a thermal energy sourceon the first side of the shutter disk.

In one embodiment, the shutter disk is between the electrode and theholder.

In one embodiment, the shutter disk has a circular shape with a firstradius. The first side includes an inner circular area having a secondradius and an outer ring area occupying an area outside of the secondradius of the inner circular area and within the first radius of theshutter disk.

In one embodiment, the thermal energy source includes a lamp modulewithin the inner circular area of the first side of the shutter disk.

In one embodiment, the shutter disk further includes an etch modulewithin the outer ring area of the first side of the shutter disk.

In one embodiment, the etch module includes a source of electromagneticenergy suitable for use in at least one of a chemical etching pre-cleanprocess and a physical etching pre- clean process.

In one embodiment, the etch module is connected to a power source. Thepower source includes a direct current (DC) power or a radio frequency(RF) power.

In one embodiment, the film deposition chamber further includes a gasline connected to the shutter disk for providing at least one of areactive gas and an inert gas for applying to the workpiece.

Another aspect of the present disclosure provides a multifunctionalshutter disk having a first surface and a second surface. Themultifunctional shutter disk includes: a lamp module on the firstsurface of the shutter disk; a power module adjacent to the lamp moduleon the first surface.

The first surface includes: an inner circle having a first radius, thelamp module occupying at least a portion of the inner circle; and anouter circle concentric with the inner circle, the outer circle having asecond radius greater than the first radius, the power module occupyingat least a portion of an area between the outer circle and the innercircle.

In one embodiment, the lamp module includes a heater for heating aworkpiece.

In one embodiment, the power module includes a source of electromagneticenergy suitable for use in at least one of a chemical etching pre-cleanprocess and a physical etching pre-clean process.

In one embodiment, the lamp module and the power module are coplanar toeach other on the first surface.

In one embodiment, the multifunctional shutter disk further includes agas line for supplying reactive gas suitable for use in the chemicaletching pre-clean process and inert gas suitable for use in the physicaletching pre-clean process.

Yet another aspect of the present disclosure provides a method. Themethod includes the steps of providing a workpiece to a multifunctionalchamber where degassing of the workpiece, pre-cleaning of the workpiece,and deposition of film onto the workpiece occur; placing the workpieceon a holder within the chamber and below a multifunctional shutter disk;activating a source of thermal energy on the multifunctional shutterdisk; degassing the workpiece; and depositing a film on the workpiece.

In one embodiment, the method further includes the steps of activating apower module on the multifunctional shutter disk; etching material fromthe workpiece using a physical etching method powered by the powermodule.

In one embodiment, the method further includes the step of activating apower module of the multifunctional shutter disk to clean the workpiecewith a chemical etching method after degassing the workpiece.

In one embodiment, etching material from the workpiece using thephysical etching method includes: supplying inert gas into the chamber;applying electromagnetic power towards the workpiece using the powermodule to provide a suitable energy level for creating a plasma state ofthe inert gas; and cleaning a surface of the workpiece using the inertgas at the plasma state.

In one embodiment, wherein etching material from the workpiece usingchemical etching method includes: supplying reactive gas into thechamber; applying electromagnetic power towards the workpiece using thepower module to provide a suitable energy level for creating a plasmastate of the reactive gas; and cleaning a surface of the workpiece usingthe reactive gas at the plasma state.

In one embodiment, the method further includes: removing the workpiecefrom the chamber; and placing the workpiece to a separate chamber forcooling the workpiece.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method, comprising: providing a workpiece to a multifunctionalchamber where degassing of the workpiece, pre-cleaning of the workpiece,and deposition of film onto the workpiece occur; placing the workpieceon a holder within the chamber and below a multifunctional shutter disk;activating a source of thermal energy on the multifunctional shutterdisk; degassing the workpiece; and depositing a film on the workpiece.2. The method of claim 1, further comprising: activating a power moduleon the multifunctional shutter disk; and etching material from theworkpiece using a physical etching method powered by the power module.3. The method of claim 1, further comprising: activating a power moduleof the multifunctional shutter disk to clean the workpiece with achemical etching method after degassing the workpiece.
 4. The method ofclaim 2, wherein etching material from the workpiece using the physicaletching method includes: supplying inert gas into the chamber; applyingelectromagnetic power towards the workpiece using the power module toprovide a suitable energy level for creating a plasma state of the inertgas; and cleaning a surface of the workpiece using the inert gas at theplasma state.
 5. The method of claim 3, wherein etching material fromthe workpiece using chemical etching method includes: supplying reactivegas into the chamber; applying electromagnetic power towards theworkpiece using the power module to provide a suitable energy level forcreating a plasma state of the reactive gas; and cleaning a surface ofthe workpiece using the reactive gas at the plasma state.
 6. The methodof claim 2, further comprising: removing the workpiece from the chamber;and placing the workpiece to a separate chamber for cooling theworkpiece.
 7. The method of claim 1, further comprising: removing theworkpiece from the chamber; placing the workpiece in different chamber;and depositing a material on the workpiece in the different chamber. 8.A material deposition method, comprising: providing a workpiece to amultifunctional chamber where degassing of the workpiece and depositionof film onto the workpiece occur; placing the workpiece on a holderwithin the chamber and below a multifunctional shutter disk; activatinga source of thermal energy on the multifunctional shutter disk;degassing the workpiece; storing the multifunctional shutter disk; anddepositing a film on the workpiece.
 9. The method of claim 8, furthercomprising: activating a power module on the multifunctional shutterdisk; and etching material from the workpiece using a physical etchingmethod powered by the power module.
 10. The method of claim 8, furthercomprising: activating a power module of the multifunctional shutterdisk to clean the workpiece with a chemical etching method afterdegassing the workpiece.
 11. The method of claim 9, wherein etchingmaterial from the workpiece using the physical etching method includes:supplying inert gas into the chamber; applying electromagnetic powertowards the workpiece using the power module to provide a suitableenergy level for creating a plasma state of the inert gas; and cleaninga surface of the workpiece using the inert gas at the plasma state. 12.The method of claim 10, wherein etching material from the workpieceusing chemical etching method includes: supplying reactive gas into thechamber; applying electromagnetic power towards the workpiece using thepower module to provide a suitable energy level for creating a plasmastate of the reactive gas; and cleaning a surface of the workpiece usingthe reactive gas at the plasma state.
 13. The method of claim 8, furthercomprising: removing the workpiece from the chamber; and placing theworkpiece to a separate chamber for cooling the workpiece.
 14. Themethod of claim 8, further comprising: removing the workpiece from thechamber; and placing the workpiece to a separate chamber for carryingout a chemical vapor deposition of a material on the workpiece.
 15. Amethod, comprising: providing a workpiece to a multifunctional chamberwhere pre-cleaning of the workpiece and deposition of film onto theworkpiece occur; placing the workpiece on a holder within the chamberand below a multifunctional shutter disk; providing a cleaning gaswithin the chamber; activating a source of power on the multifunctionalshutter disk; cleaning the workpiece; storing the multifunctionalshutter disk; and depositing a film on the workpiece.
 16. The method ofclaim 15, wherein the cleaning the workpiece is a plasma etching. 17.The method of claim 15, wherein the providing a cleaning gas includesproviding a cleaning gas from a source of cleaning gas on themultifunctional shutter disk.
 18. The method of claim 15, whereinproviding a cleaning gas includes providing a cleaning gas from acleaning gas inlet connected to the chamber.
 19. The method of claim 15,wherein the activating a source of power includes activating a source ofelectromagnetic power.
 20. The method of claim 15, wherein thedepositing a film on the workpiece includes depositing a film using aphysical vapor deposition process.